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900V 36A APT36N90BC3G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C OLMOS O
Power Semiconductors
Super Junction MOSFET
TO
-24
7
D3
* Ultra Low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated * Extreme dv/dt Rated * Dual die (parallel) * Popular T-MAX Package
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
D G S
MAXIMUM RATINGS
Symbol Parameter VDSS ID IDM VGS PD Drain-Source Voltage Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current
1
All Ratings per die: TC = 25C unless otherwise specified.
APT36N90BC3G 900 36 23 96 20 390 Volts Watts Amps UNIT Volts
Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25C
TJ,TSTG Operating and Storage Junction Temperature Range TL dv/ dt Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 400V, ID = 36A, TJ = 125C) Avalanche Current
2 2 ( Id = 8.8A, Vdd = 50V ) ( Id = 8.8A, Vdd = 50V )
-55 to 150 260 50 8.8 2.9 1940
C V/ns Amps mJ
IAR EAR EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol BV(DSS) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
3
MIN 900
TYP
MAX
UNIT Volts
(VGS = 10V, ID = 18A) 2.5
0.10 50 3
0.12 100 100 3.5
Ohms A nA Volts
6-2009 050-8068 Rev A
Zero Gate Voltage Drain Current (VDS = 900V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 900V, VGS = 0V, TC = 150C) Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.9mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv
APT36N90BC3G
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 450V ID = 36A @ 25C INDUCTIVE SWITCHING VGS = 15V VDD = 600V ID = 36A @ 25C RG = 4.3
5
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
4
MIN
TYP
MAX
UNIT pF
7463 6827 167 252 38 112 70 20 400 25 1500 750 2130 867
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 3
nC
ns
INDUCTIVE SWITCHING @ 25C VDD = 600V, VGS = 15V ID = 36A, RG = 4.3 INDUCTIVE SWITCHING @ 125C VDD = 600V, VGS = 15V ID = 36A, RG = 4.3
J
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps
36 96 0.8
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = 18A)
6
1.2
10
Volts V/ns ns
/dt
dv
/dt
t rr Q rr IRRM
Reverse Recovery Time (IS = -36A, di/dt = 100A/s) Reverse Recovery Charge (IS = -36A, di/dt = 100A/s) Peak Recovery Current (IS = -36A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
930 1230 35 44 70
68 TYP MAX
C
Amps
THERMAL CHARACTERISTICS Symbol RJC RJA UNIT C/W
0.3 31
4 See MIL-STD-750 Method 3471 5 Eon includes diode reverse recovery. 6 Maximum 125C diode commutation speed = di/dt 600A/s
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f . Pulse width tp limited by Tj max. 3 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
0.35 ZJC, THERMAL IMPEDANCE (C/W) 0.30 0.25 0.7 0.20 0.15 0.10 0.05 0 0.5 0.3 D = 0.9
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
6-2009
Note:
PDM
t1 t2
050-8068 Rev A
0.1 0.05 10
-5
SINGLE PULSE 10
-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-2 0.1 10-3 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
Typical Performance Curves
120 10 &15V 100 IC, DRAIN CURRENT (A) 80 60 5V 40 20 0 4.5V 4V 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Low Voltage Output Characteristics
NORMALIZED TO V
GS
APT36N90BC3G
100 6.5V ID, DRAIN CURRENT (A) 90 80 5.5V 70 60 50 40 30 20 10 0 0 1 TJ= -55C TJ= 25C TJ= 125C 2 3 4 5 6
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0
VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 3, Transfer Characteristics 40 35 ID, DRAIN CURRENT (A) 30 25 20 15 10 5
1.4 1.3 1.2 IDR, REVERSE
= 10V @ 47A
VGS = 10V 1.0 VGS = 20V 1 0.9 0.8
0
10
20
30
40
50
60
70
80
1.20 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (A) FIGURE 4, RDS(ON) vs Drain Current
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 5, Maximum Drain Current vs Case Temperature 3.0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5 2.0 1.5 1.0 0.5 0
0
25
1.15 1.10 1.05 1
0.95 0.90
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, Breakdown Voltage vs Temperature
0
0
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, On-Resistance vs Temperature
1.2 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.1 1.0 0.9 0.8 0.7 0.6 ID, DRAIN CURRENT (A)
300
100
10s
10
100s 1ms 10ms 100ms DC line
50 75 100 125 150 TC, Case Temperature (C) FIGURE 8, Threshold Voltage vs Temperature
0
25
1
1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 9, Maximum Safe Operating Area
050-8068 Rev A 6-2009
Typical Performance Curves
60,000 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 12 10 VDS= 180V 8 6 4 2 0 VDS= 450V
I = 94A
D
APT36N90BC3G
10,000 C, CAPACITANCE (pF)
Ciss Coss
1,000
VDS= 720V
100 Crss 10 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 10, Capacitance vs Drain-To-Source Voltage
300 IDR, REVERSE DRAIN CURRENT (A) TJ= +150C 100 TJ = =25C td(on) and td(off) (ns)
50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 11, Gate Charges vs Gate-To-Source Voltage 350 300 250 200 150 100 50 td(on) 0 30 40 50 ID (A) FIGURE 13, Delay Times vs Current
V
DD G
0
td(off)
V
DD G
= 600V
R
= 4.3
10
T = 125C J L = 100H
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) FIGURE 12, Source-Drain Diode Forward Voltage 0
V
DD G
1
0
10
20
60
= 600V
tf SWITCHING ENERGY (J)
3500
= 600V
0 0 tr, and tf (ns) 0 0 0 0 0
R
= 4.3
T = 125C J L = 100H
3000 2500 2000 1500 1000 500 0
R
= 4.3
T = 125C L = 100H EON includes diode reverse recovery.
J
Eoff
tr
Eon
30 40 50 60 ID (A) FIGURE 14 , Rise and Fall Times vs Current Eon Eoff
0
10
20
0
30 40 50 60 ID (A) FIGURE 15, Switching Energy vs Current
10
20
4500 4000 SWITCHING ENERGY (uJ) 3500 3000 2500 2000 1500 1000 500 0 0 10
V
DD
6-2009
= 600V
I = 36A
D
050-8068 Rev A
T = 125C J L = 100H EON includes diode reverse recovery.
20 30 40 50 60 RG, GATE RESISTANCE (Ohms) FIGURE 16, Switching Energy vs Gate Resistance
Typical Performance Curves
TJ = 125C 10% Gate Voltage 90% td(on) 90% tr 10% 5% Collector Voltage Collector Voltage Collector Current Collector Current td(off) Gate Voltage
APT36N90BC3G
TJ = 125C
10% tf
5%
0
Switching Energy
Switching Energy
Figure 17, Turn-on Switching Waveforms and Definitions
Figure 18, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G D.U.T.
Figure 19, Inductive Switching Test Circuit Figure 20, Inductive Switching Test Circuit
TO-247(R) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-8068 Rev A 6-2009
Gate Drain Source

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